Title :
The efficiency of UV LEDs based on GaN/AlGaN heterostructures
Author :
Evseenkov, A.S. ; Tarasov, S.A. ; Lamkin, I.A. ; Solomonov, A.V. ; Kurin, S.Yu.
Author_Institution :
St.-Petersburg Electrotech. Univ. “LETI”, St. Petersburg, Russia
Abstract :
The UV LED heterostructures have been obtained by HVPE approach and investigated by XRD, AFM and PL methods. The experiment shows that the peak wavelength of UV LEDs is in the range of 360-365 nm with FWHM of 10-13 nm. At operating current of 20 mA the active region temperature Tj is 43 °C, the output optical power and efficiency - 1.14 mW and 1.46 %, respectively. It is presented a model based on corpuscular Monte Carlo method in order to calculate the light extraction index. The simulation results allow us to propose the ways to increase the efficiency of UV LEDs by 3-4 times: surface interfaces texturing, optimization of the design of heterostructures, and the use of lenses.
Keywords :
III-V semiconductors; Monte Carlo methods; X-ray diffraction; aluminium compounds; atomic force microscopy; gallium compounds; lenses; light emitting diodes; photoluminescence; wide band gap semiconductors; AFM method; GaN-AlGaN; GaN-AlGaN heterostructures; HVPE approach; Monte Carlo method; UV LED heterostructures; XRD method; current 20 mA; lenses; light extraction index; photoluminescence method; surface interfaces texturing; temperature 43 degC; wavelength 360 nm to 365 nm; Epitaxial growth; Gallium nitride; Indexes; Light emitting diodes; Photonics; Power lasers; RNA; Monte-Carlo method; UV LEDs; efficiency;
Conference_Titel :
Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW), 2015 IEEE NW Russia
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-7305-7
DOI :
10.1109/EIConRusNW.2015.7102224
