Title :
Low temperature photoluminescence and photoreflectance of metamorphic HEMT structures with high mole fraction of in
Author :
Romanovskiy, D.S. ; Solomonov, A.V. ; Tarasov, S.A. ; Lamkin, I.A. ; Galiev, G.B. ; Pushkarev, S.S.
Author_Institution :
LETI, St.-Petersburg Electrotech. Univ.Saint-Petersburg, St. Petersburg, Russia
Abstract :
Low-temperature photoluminescence and photoreflectance have been studied in several metamorphic HEMT (MHEMT) heterostructures with the In0.7Ga0.3As active regions and different buffer layer designs. It was found that structures with step-graded metamorphic buffer have better quality. Also it was shown that mismatched superlattices in metamorphic buffer can influence on the half-width of photoluminescence spectra. The possible attribution of photoluminescence spectral lines and their thermal behaviour are critically discussed. The photoreflectance spectrum shows a lot of features in energy region, where none of PL features observed.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; photoluminescence; photoreflectance; superlattices; In high mole fraction; In0.7Ga0.3As; MHEMT; low temperature photoluminescence; metamorphic HEMT structures; mismatched superlattices; photoluminescence spectra; photoreflectance spectrum; step-graded metamorphic buffer; Biology; Indium gallium arsenide; mHEMTs; HEMTs; low temperature; metamorphic buffer; photoluminescence; photoreflectance;
Conference_Titel :
Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW), 2015 IEEE NW Russia
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-7305-7
DOI :
10.1109/EIConRusNW.2015.7102227