DocumentCode :
708089
Title :
New simulation method for Deep Trench Termination diode (DT2) using mixed-mode TCAD sentaurus
Author :
Baccar, F. ; Arbess, H. ; Theolier, L. ; Azzopardi, S. ; Woirgard, E.
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
fYear :
2015
fDate :
19-22 April 2015
Firstpage :
1
Lastpage :
5
Abstract :
This work presents a methodology using mixed-mode simulation with TCAD Sentaurus to model, analyze, and optimize the representation of the Deep Trench Termination Diode (DT2) without increasing the number of nodes and the computation time. Moreover, several convergence problems which can be found for many kinds of simulations have been resolved.
Keywords :
isolation technology; semiconductor diodes; technology CAD (electronics); DT2 diode; TCAD Sentaurus; deep trench termination diode; mixed-mode simulation; Anodes; Convergence; IP networks; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015 16th International Conference on
Conference_Location :
Budapest
Print_ISBN :
978-1-4799-9949-1
Type :
conf
DOI :
10.1109/EuroSimE.2015.7103122
Filename :
7103122
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=708089
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