• DocumentCode
    708275
  • Title

    A self-powered ultra-fast DC solid state circuit breaker using a normally-on SiC JFET

  • Author

    Zhenyu Miao ; Sabui, Gourab ; Chen, Aozhu ; Yan Li ; Shen, Z. John ; Jun Wang ; Zhikang Shuai ; An Luo ; Xin Yin ; Mengxuan Jiang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
  • fYear
    2015
  • fDate
    15-19 March 2015
  • Firstpage
    767
  • Lastpage
    773
  • Abstract
    This paper introduces a new self-powered solid state circuit breaker (SSCB) concept using a normally-on SiC JFET as the main static switch and a fast-starting isolated DC/DC converter as the protection driver. The new SSCB detects short circuit faults by sensing its drain-source voltage rise, and draws power from the fault condition to turn and hold off the SiC JFET. The new two-terminal SSCB can be directly placed in a circuit branch without requiring any external power supply or additional wiring. A unique low power isolated DC/DC converter is designed and optimized to provide a fast reaction to a short circuit event. The SSCB prototypes have experimentally demonstrated a fault current interruption capability up to 180 amperes at a DC bus voltage of 400 volts within 0.8 microseconds. DC circuit protection applications provide a unique market opportunity for wide bandgap power semiconductor devices outside the conventional focus on power electronic converter applications.
  • Keywords
    DC-DC power convertors; circuit breakers; fault diagnosis; junction gate field effect transistors; short-circuit currents; silicon compounds; wide band gap semiconductors; DC bus voltage; DC circuit protection application; SiC; drain-source voltage rise; fast-starting isolated DC-DC converter; fault current interruption capability; low power isolated DC-DC converter; normally-on JFET; power electronic converter application; power supply; protection driver; self-powered ultrafast DC solid state circuit breaker; short circuit fault detection; time 0.8 mus; two-terminal SSCB concept; voltage 400 V; wide band-gap power semiconductor device; wiring; Circuit faults; JFETs; Logic gates; Pulse width modulation; Silicon carbide; Switches; Topology; DC power; SiC JFET; WBG semiconductors; solid state circuit breaker (SSCB);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
  • Conference_Location
    Charlotte, NC
  • Type

    conf

  • DOI
    10.1109/APEC.2015.7104436
  • Filename
    7104436