Unified theory of reverse blocking dynamics in high-voltage cascode devices

Author

Roig, Jaume ; Bauwens, Filip ; Banerjee, Abhishek ; Woochul Jeon ; Young, Alexander ; McDonald, Jason ; Padmanabhan, Balaji ; Liu, Charlie

Author_Institution

ON Semicond., Oudenaarde, Belgium

fYear

2015

fDate

15-19 March 2015

Firstpage

1256

Lastpage

1261

Abstract

This paper investigates the dynamic evolution of the internal voltages in cascode-based high-voltage devices under reverse blocking mode. For the first time, this analysis covers blocking times ranging from fast transitions to steady-state, where leakage current plays a predominant role. A theoretical model is developed with the support of simulation and experimental data for cascode switch and rectifier, constituted by GaN-HEMTs (600V) and Si-FETs (30V). Finally, this knowledge is used to build a GaN cascode switch with enhanced electrical performance and ruggedness.

Keywords

III-V semiconductors; elemental semiconductors; field effect transistor switches; gallium compounds; high electron mobility transistors; leakage currents; silicon; GaN; GaN-HEMT; Si; Si-FET; blocking times; cascode switch; cascode-based high-voltage devices; dynamic evolution; fast transitions; internal voltages; leakage current; rectifier; steady-state; under reverse blocking mode; voltage 30 V; voltage 600 V; Capacitance; HEMTs; Mathematical model; Steady-state; Switches; Temperature measurement; GaN; HEMT; cascode; reverse blocking;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Conference_Location

Charlotte, NC

Type

conf

DOI

10.1109/APEC.2015.7104508

Filename

7104508