Online junction temperature measurement using peak gate current

Author

Baker, Nick ; Munk-Nielsen, Stig ; Iannuzzo, Francesco ; Liserre, Marco

Author_Institution

Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark

fYear

2015

fDate

15-19 March 2015

Firstpage

1270

Lastpage

1275

Abstract

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. A measurement circuit can be integrated into a gate driver with no disruption to converter operation. The method is immune to dependence on load current, and allows autonomous and high frequency measurements through a measurement circuit directly controlled via the gate signal.

Keywords

MOSFET; insulated gate bipolar transistors; power semiconductor switches; semiconductor junctions; IGBT; MOS-gated power semiconductor switch; MOSFET; external gate resistor; gate driver; gate signal; internal gate resistance; load current; measurement circuit; measurement method; online junction temperature measurement; peak gate current; temperature-dependent resistance; Current measurement; Electrical resistance measurement; Insulated gate bipolar transistors; Logic gates; MOSFET; Resistance; Temperature measurement; IGBT; Junction Temperature; MOSFET; Measurement; Power Semiconductors; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Conference_Location

Charlotte, NC

Type

conf

DOI

10.1109/APEC.2015.7104511

Filename

7104511