Title :
A new family of GaN transistors for highly efficient high frequency DC-DC converters
Author :
Reusch, David ; Strydom, Johan ; Lidow, Alex
Author_Institution :
Efficient Power Conversion Corp., El Segundo, CA, USA
Abstract :
In this paper we will discuss the latest developments in DC-DC converters, including major improvements in eGaN® FETs with the latest generation devices and the introduction of a new family of monolithic half bridge ICs offering unmatched high frequency performance. The new family of eGaN FETs is keeping Moore´s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOSFET in high frequency power conversion.
Keywords :
DC-DC power convertors; III-V semiconductors; gallium compounds; monolithic integrated circuits; power MOSFET; wide band gap semiconductors; DC-DC converters; GaN; Moore´s Law; eGaN FET; figures of merit; high frequency power conversion; monolithic half bridge IC; power MOSFET; transistors; Capacitance; Gallium nitride; Logic gates; MOSFET; Silicon;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
DOI :
10.1109/APEC.2015.7104619
