DocumentCode :
708415
Title :
Acoustic emission caused by the failure of a power transistor
Author :
Karkkainen, Tommi J. ; Talvitie, Joonas P. ; Kuisma, Mikko ; Silventoinen, Pertti ; Mengotti, Elena
Author_Institution :
Lab. of Appl. Electron., Lappeenranta Univ. of Technol., Lappeenranta, Finland
fYear :
2015
fDate :
15-19 March 2015
Firstpage :
2481
Lastpage :
2484
Abstract :
The authors show for the first time that acoustic events are related to the failure of transistors. An experimental setup is presented, that was used to make a sample of 26 insulated gate bipolar transistors (IGBT) to fail. The acoustic events in the transistors were monitored. It was discovered that two distinct types of acoustic events are related to the failure. This study complements recent work where it was shown that the switching operation of power transistors causes acoustic emissions to take place.
Keywords :
acoustic emission; failure analysis; insulated gate bipolar transistors; power bipolar transistors; IGBT; acoustic emission; insulated gate bipolar transistors; power transistor failure; switching operation; Acoustic emission; Acoustic measurements; Condition monitoring; Insulated gate bipolar transistors; Logic gates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
Type :
conf
DOI :
10.1109/APEC.2015.7104697
Filename :
7104697
Link To Document :
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