DocumentCode
708421
Title
Embedded structure for a voltage clamping circuit
Author
Weiyi Feng ; Lizhi Xu ; Weiqiang Zhang ; Hongyang Wu
Author_Institution
Delta Power Electron. Center, Delta Electron. (Shanghai) Co., Ltd., Shanghai, China
fYear
2015
fDate
15-19 March 2015
Firstpage
2577
Lastpage
2580
Abstract
In this paper, a novel embedded voltage clamping structure is proposed for an IGBT module. Firstly, the negative effect of loop inductances in the voltage clamping circuit is analyzed. And then, a novel embedded structure is proposed to minimize the parasitic inductances in the voltage clamping loop. Finally, an experiment is carried out on an IGBT module. With the proposed embedded structure, the IGBT voltage spike is maximally limited at the turn-off transient, which keeps the device operating in a much safer region.
Keywords
inductance; insulated gate bipolar transistors; power supply quality; IGBT module; IGBT voltage spike; embedded voltage clamping structure; loop inductances; parasitic inductance; voltage clamping loop; Capacitors; Clamps; Inductance; Insulated gate bipolar transistors; Logic gates; Snubbers; Switches; Voltage clamping; embedded structure; parasitic inductances;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location
Charlotte, NC
Type
conf
DOI
10.1109/APEC.2015.7104714
Filename
7104714
Link To Document