Drive and protection methods for very high current lateral GaN power transistors

This paper shows that it is possible for lateral GaN power transistors to provide very high current switching capability suitable for automotive applications if the device electrodes are overplated to enhance their current capacity. This solves the electromigration concerns that have previously limited the current capability of lateral GaN transistors. This paper describes drive circuitry that greatly reduces loop inductance issues. Also described are suitable high speed current monitoring, and short circuit protection circuitry.