DocumentCode :
708556
Title :
Usage based predictive transistor aging model to optimize test limits on IO circuits
Author :
Mendes, James ; Daniel, Abishai
fYear :
2015
fDate :
26-29 Jan. 2015
Firstpage :
1
Lastpage :
4
Abstract :
For reliability, it is crucial to understand the impact of aging on a component to insure that performance specifications are met throughout the design lifetime. This paper describes a Monte Carlo based predictive modeling framework to comprehend aging on a GPIO interface in 32nm Intel chipset product. This model incorporates component use conditions such as operating temperatures in the field and platform performance attributes. Use conditions are applied to enable this model to closely match expected population behavior in the field. These results were then used to optimize operating spec parameter values so as to reduce design overhead and product development costs.
Keywords :
Monte Carlo methods; ageing; optimisation; semiconductor device reliability; semiconductor device testing; transistors; GPIO interface; IO circuits; Intel chipset product; Monte Carlo based predictive modeling framework; design lifetime; design overhead reduction; field and platform performance; operating spec parameter value optimization; operating temperatures; performance specifications; population behavior; product development cost reduction; reliability; size 32 nm; test limit optimization; usage based predictive transistor aging model; Aging; Degradation; Integrated circuit reliability; Predictive models; Temperature measurement; Transistors; GPIO interface; HVM test; Hot carrier; Intel 32nm node; predictive model; transistor aging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability and Maintainability Symposium (RAMS), 2015 Annual
Conference_Location :
Palm Harbor, FL
Print_ISBN :
978-1-4799-6702-5
Type :
conf
DOI :
10.1109/RAMS.2015.7105119
Filename :
7105119
Link To Document :
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