• DocumentCode
    708556
  • Title

    Usage based predictive transistor aging model to optimize test limits on IO circuits

  • Author

    Mendes, James ; Daniel, Abishai

  • fYear
    2015
  • fDate
    26-29 Jan. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    For reliability, it is crucial to understand the impact of aging on a component to insure that performance specifications are met throughout the design lifetime. This paper describes a Monte Carlo based predictive modeling framework to comprehend aging on a GPIO interface in 32nm Intel chipset product. This model incorporates component use conditions such as operating temperatures in the field and platform performance attributes. Use conditions are applied to enable this model to closely match expected population behavior in the field. These results were then used to optimize operating spec parameter values so as to reduce design overhead and product development costs.
  • Keywords
    Monte Carlo methods; ageing; optimisation; semiconductor device reliability; semiconductor device testing; transistors; GPIO interface; IO circuits; Intel chipset product; Monte Carlo based predictive modeling framework; design lifetime; design overhead reduction; field and platform performance; operating spec parameter value optimization; operating temperatures; performance specifications; population behavior; product development cost reduction; reliability; size 32 nm; test limit optimization; usage based predictive transistor aging model; Aging; Degradation; Integrated circuit reliability; Predictive models; Temperature measurement; Transistors; GPIO interface; HVM test; Hot carrier; Intel 32nm node; predictive model; transistor aging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability and Maintainability Symposium (RAMS), 2015 Annual
  • Conference_Location
    Palm Harbor, FL
  • Print_ISBN
    978-1-4799-6702-5
  • Type

    conf

  • DOI
    10.1109/RAMS.2015.7105119
  • Filename
    7105119