A novel structure of MOSFET array to measure ioff-ion with high accuracy and high density

Author

Suzuki, Tsuyoshi ; Anchlia, Ankur ; Cherman, Vladimir ; Oishi, Hidetoshi ; Mori, Shigetaka ; Ryckaert, Julien ; Ogawa, Kazuhisa ; Van der Plas, Geert ; Beyne, Eric ; Fukuzaki, Yuzo ; Verkest, Diederik ; Ohnuma, Hidetoshi

Author_Institution

Sony Corp., Atsugi, Japan

fYear

2015

fDate

23-26 March 2015

Firstpage

9

Lastpage

13

Abstract

We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.

Keywords

MOSFET; electric current measurement; semiconductor device measurement; semiconductor device testing; I_off-I_on; IR drop; Ioff-Ion; Kelvin probe structure; MOSFET array structure; feedback looped biasing; high accuracy measurement; leakage contamination; scribe line; size 28 nm; Arrays; CMOS integrated circuits; MOSFET; MOSFET circuits; Monitoring; Pollution measurement; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2015 International Conference on

Conference_Location

Tempe, AZ

ISSN

1071-9032

Print_ISBN

978-1-4799-8302-5

Type

conf

DOI

10.1109/ICMTS.2015.7106095

Filename

7106095