Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices

Author

Takano, K. ; Katayama, K. ; Mizukusa, S. ; Amakawa, S. ; Yoshida, T. ; Fujishima, M.

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2015

fDate

23-26 March 2015

Firstpage

230

Lastpage

234

Abstract

This work proposed the systematic calibration method of process parameters for electromagnetic analysis of CMOS back-end devices in millimeter-wave and THz frequencies. It uses the propagation constants of transmission lines in all the measurement frequency and the RLGC model parameters in low frequency as the objective variables of the parameter fitting. It was showed that the EM simulation results using calibrated process parameters were in good agreement with the measurement results up to 330 GHz.

Keywords

CMOS integrated circuits; calibration; electromagnetic fields; electromagnetic wave propagation; millimetre wave devices; transmission lines; EM simulation; RLGC model parameters; THz frequency; electromagnetic field analysis; measurement frequency; millimeter wave CMOS back-end devices; objective variables; process parameter fitting; propagation constants; systematic calibration procedure; transmission lines; Dielectric measurement; Fitting; Frequency measurement; Metals; Permeability measurement; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2015 International Conference on

Conference_Location

Tempe, AZ

ISSN

1071-9032

Print_ISBN

978-1-4799-8302-5

Type

conf

DOI

10.1109/ICMTS.2015.7106100

Filename

7106100