Title :
Systematic calibration procedure of process parameters for electromagnetic field analysis of millimeter-wave CMOS devices
Author :
Takano, K. ; Katayama, K. ; Mizukusa, S. ; Amakawa, S. ; Yoshida, T. ; Fujishima, M.
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
This work proposed the systematic calibration method of process parameters for electromagnetic analysis of CMOS back-end devices in millimeter-wave and THz frequencies. It uses the propagation constants of transmission lines in all the measurement frequency and the RLGC model parameters in low frequency as the objective variables of the parameter fitting. It was showed that the EM simulation results using calibrated process parameters were in good agreement with the measurement results up to 330 GHz.
Keywords :
CMOS integrated circuits; calibration; electromagnetic fields; electromagnetic wave propagation; millimetre wave devices; transmission lines; EM simulation; RLGC model parameters; THz frequency; electromagnetic field analysis; measurement frequency; millimeter wave CMOS back-end devices; objective variables; process parameter fitting; propagation constants; systematic calibration procedure; transmission lines; Dielectric measurement; Fitting; Frequency measurement; Metals; Permeability measurement; Thickness measurement;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4799-8302-5
DOI :
10.1109/ICMTS.2015.7106100
