DocumentCode
708645
Title
Silicon thickness monitoring strategy for FD-SOI 28nm technology
Author
Cros, Antoine ; Monsieur, Frederic ; Carminati, Yann ; Normandon, Philippe ; Petit, David ; Arnaud, Franck ; Rosa, Julien
Author_Institution
TR&D/STD/TPS/SiRel, STMicroelectron., Crolles, France
fYear
2015
fDate
23-26 March 2015
Firstpage
65
Lastpage
69
Abstract
The silicon thickness (Tsi) fluctuation monitoring on FD-SOI 28nm technology process is addressed by 2 different electrical characterization techniques. The first, capacitive, is adapted to within wafer variations and lot/wafer variations monitoring. The second, using the Idsat sensitivity to the Tsi in an addressable transistors array, allows to measure the local variations in the range of few tens of microns.
Keywords
elemental semiconductors; silicon; silicon-on-insulator; FD-SOI process technology; Idsat sensitivity; Si; Tsi fluctuation monitoring; electrical characterization technique; lot-wafer variation monitoring; silicon thickness fluctuation monitoring strategy; size 28 nm; transistor array; Charge measurement; Doping; Electrical resistance measurement; Logic gates; MOS devices; Resistance; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location
Tempe, AZ
ISSN
1071-9032
Print_ISBN
978-1-4799-8302-5
Type
conf
DOI
10.1109/ICMTS.2015.7106110
Filename
7106110
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