Title :
Silicon thickness monitoring strategy for FD-SOI 28nm technology
Author :
Cros, Antoine ; Monsieur, Frederic ; Carminati, Yann ; Normandon, Philippe ; Petit, David ; Arnaud, Franck ; Rosa, Julien
Author_Institution :
TR&D/STD/TPS/SiRel, STMicroelectron., Crolles, France
Abstract :
The silicon thickness (Tsi) fluctuation monitoring on FD-SOI 28nm technology process is addressed by 2 different electrical characterization techniques. The first, capacitive, is adapted to within wafer variations and lot/wafer variations monitoring. The second, using the Idsat sensitivity to the Tsi in an addressable transistors array, allows to measure the local variations in the range of few tens of microns.
Keywords :
elemental semiconductors; silicon; silicon-on-insulator; FD-SOI process technology; Idsat sensitivity; Si; Tsi fluctuation monitoring; electrical characterization technique; lot-wafer variation monitoring; silicon thickness fluctuation monitoring strategy; size 28 nm; transistor array; Charge measurement; Doping; Electrical resistance measurement; Logic gates; MOS devices; Resistance; Silicon;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4799-8302-5
DOI :
10.1109/ICMTS.2015.7106110
