• DocumentCode
    708648
  • Title

    The impact of deep trench and well proximity on MOSFET performance

  • Author

    Hanyu Sheng ; Bettinger, Tamara ; Bates, John

  • Author_Institution
    Freescale Semicond. Inc., Tempe, AZ, USA
  • fYear
    2015
  • fDate
    23-26 March 2015
  • Firstpage
    82
  • Lastpage
    85
  • Abstract
    The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.
  • Keywords
    MOSFET; semiconductor device testing; MOSFET device performance; deep trench impact; size 0.13 mum; well proximity edges effects; Layout; MOSFET; Performance evaluation; Proximity effects; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures (ICMTS), 2015 International Conference on
  • Conference_Location
    Tempe, AZ
  • ISSN
    1071-9032
  • Print_ISBN
    978-1-4799-8302-5
  • Type

    conf

  • DOI
    10.1109/ICMTS.2015.7106113
  • Filename
    7106113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=708648