DocumentCode :
70887
Title :
Metamorphic GaAsP Tunnel Junctions for High-Efficiency III–V/IV Multijunction Solar Cell Technology
Author :
Chmielewski, Daniel J. ; Grassman, Tyler J. ; Carlin, Andrew M. ; Carlin, John A. ; Speelman, Austin J. ; Ringel, Steven A.
Author_Institution :
Ohio State Univ., Columbus, OH, USA
Volume :
4
Issue :
5
fYear :
2014
fDate :
Sept. 2014
Firstpage :
1301
Lastpage :
1305
Abstract :
Metamorphic GaAs0.9P0.1 tunnel diodes, designed for application to heteroepitaxial GaInP/GaAsP/Si multijunction solar cells, were grown on compositionally graded GaAsyP1-y/GaAs buffers by molecular beam epitaxy. Optimal growth conditions for high impurity doping were determined and tested using fabricated tunnel diode structures. Peak current densities of 103.9 A · cm-2 and resistance-area products of 4.5 × 10-4 Ω · cm2 were obtained. Strong agreement between simulated and fabricated devices indicates excellent device quality with respect to optimized growth conditions and near-nominal operation. These results suggest that the optimized structures are promising for use within III-V/Si multijunction solar cells operating under high concentration.
Keywords :
III-V semiconductors; buffer layers; current density; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor device models; semiconductor device testing; semiconductor doping; semiconductor epitaxial layers; semiconductor heterojunctions; silicon; solar cells; tunnel diodes; GaAsyP1-y-GaAs; GaInP-GaAsP-Si; compositionally graded buffers; device quality; heteroepitaxial multijunction solar cells; high-efficiency III-V/IV multijunction solar cell technology; impurity doping; metamorphic tunnel diodes; metamorphic tunnel junctions; molecular beam epitaxy; optimal growth conditions; peak current densities; resistance-area products; Doping; Gallium arsenide; Molecular beam epitaxial growth; Performance evaluation; Photovoltaic cells; Silicon; Temperature measurement; Charge carrier density; III–V semiconductor materials; III??V semiconductor materials; doping; epitaxial layers; photovoltaic cells; simulation; solar energy; tunneling;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2014.2328592
Filename :
6844839
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=70887
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