DocumentCode :
709102
Title :
High speed static frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 µm SiGe BiCMOS technology
Author :
Ali, U. ; Bober, M. ; Thiede, A. ; Awny, A. ; Fischer, G.
Author_Institution :
Univ. of Paderborn, Paderborn, Germany
fYear :
2015
fDate :
16-18 March 2015
Firstpage :
241
Lastpage :
243
Abstract :
A speed optimization scheme for static frequency dividers based on master-slave flip-flops is presented. As a proof of the concept, the design of a divide by two static frequency divider in 0.13 μm SiGe BiCMOS technology (with ft gt; 300 GHz and fmax gt; 450 GHz) is reported. The circuit exhibits the highest self-oscillation frequency (SOF) of 111.6 GHz among the existing SiGe technology based static frequency dividers. With singleended sine wave clock input, divider is operational from 6 to 128.7 GHz (limited by measurement equipment). At dual power supply with Vcc = 3 V and Vee = -1.9 V, the circuit consumes 40 mA per latch.
Keywords :
BiCMOS logic circuits; Ge-Si alloys; circuit optimisation; field effect MIMIC; flip-flops; frequency dividers; millimetre wave frequency convertors; BiCMOS technology; SiGe; current 40 mA; frequency 6 GHz to 128.7 GHz; master-slave flip-flops; self-oscillation frequency; single-ended sine wave clock input; size 0.13 mum; speed optimization scheme; static frequency divider; voltage 1.9 V; voltage 3 V; Capacitance; Frequency conversion; Frequency measurement; Latches; Metals; Probes; Silicon germanium; HBT; SiGe; latch; static frequency dividers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (GeMiC), 2015 German
Conference_Location :
Nuremberg
Type :
conf
DOI :
10.1109/GEMIC.2015.7107798
Filename :
7107798
Link To Document :
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