Title :
The room temperature bonding method of Al2O3 barrier layers deposited using Atomic Layer Deposition
Author :
Matsumae, Takashi ; Fujino, Masahisa ; Kai Zhang ; Baumgart, Helmut ; Suga, Tadatomo
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Room temperature bonding of Al2O3 layer deposited by Atomic Layer Deposition (ALD) was studied for fabrication of micro-electronics, and gas barrier structure of polymer films. ALD deposition was performed at different process temperature at 80, 150 and 250 °C. From results of AFM surface profile, samples prepared at higher temperature in ALD process have rough surface. Also polymer films processed at high temperature has large wrinkle. Bonded area using Si and polyimide substrate coated at 80 °C were large, and there is only small unbonded area.
Keywords :
alumina; atomic force microscopy; atomic layer deposition; elemental semiconductors; integrated circuit bonding; integrated circuit manufacture; polymer films; silicon; AFM surface profile; ALD process; Al2O3; Si; atomic layer deposition; barrier layers; bonding method; gas barrier structure; microelectronics; polyimide substrate; polymer films; temperature 150 degC; temperature 250 degC; temperature 293 K to 298 K; temperature 80 degC; Aluminum oxide; Bonding; Rough surfaces; Silicon; Substrates; Surface morphology; Surface treatment; Atomic layer deposition; Room temperature bonding; Surface Activated Bonding method;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111007
