DocumentCode :
709592
Title :
Fine trace substrate with 2µm fine line for advanced package
Author :
Dyi-Chung Hu ; Puru Lin ; Yu Hua Chen
Author_Institution :
Unimicron Technol. Corp, Hsinchu, Taiwan
fYear :
2015
fDate :
14-17 April 2015
Firstpage :
170
Lastpage :
173
Abstract :
The increasing demand of advanced electronics devices with ever increasing of functionality and performance have driven semiconductor industry to scale down in feature size of the Integrated Circuits. The semiconductor industry still follows the Moore´s Law. In order to package the increasing number of transistors per unit area, the packaging substrate also need to increase packaging density by going to fine line and fine vias. The organic dielectrics with E-less copper capability that are required in the laminated substrate industry. Copper cored laminates are also commonly used in the industry. In this paper we present factors that affect the formation of fine line on organic dielectrics. The compatibility of fine line process to the substrate process has been evaluated in this study. Test vehicles for evaluation of 2μm fine line are designed and built. In addition, it is desirable to process fine line on large panel greater than 12” format for cost down reason. Fine line that is as small as 2μm has been evaluated on panels with the size as large as 508×508 mm in this study.
Keywords :
semiconductor device packaging; transistors; vias; Moore´s Law; electronics devices; fine line; fine trace substrate; integrated circuits; organic dielectrics; packaging density; packaging substrate; semiconductor industry; size 2 mum; size 508 mm; transistors; vias; Coatings; Copper; Films; Glass; Industries; Laminates; Substrates; 2µm fine line; 508mm×508mm panel size; CCL; laminate substrate; slit coater; sputter seed layer; undercut;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
Type :
conf
DOI :
10.1109/ICEP-IAAC.2015.7111022
Filename :
7111022
Link To Document :
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