• DocumentCode
    709592
  • Title

    Fine trace substrate with 2µm fine line for advanced package

  • Author

    Dyi-Chung Hu ; Puru Lin ; Yu Hua Chen

  • Author_Institution
    Unimicron Technol. Corp, Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    14-17 April 2015
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    The increasing demand of advanced electronics devices with ever increasing of functionality and performance have driven semiconductor industry to scale down in feature size of the Integrated Circuits. The semiconductor industry still follows the Moore´s Law. In order to package the increasing number of transistors per unit area, the packaging substrate also need to increase packaging density by going to fine line and fine vias. The organic dielectrics with E-less copper capability that are required in the laminated substrate industry. Copper cored laminates are also commonly used in the industry. In this paper we present factors that affect the formation of fine line on organic dielectrics. The compatibility of fine line process to the substrate process has been evaluated in this study. Test vehicles for evaluation of 2μm fine line are designed and built. In addition, it is desirable to process fine line on large panel greater than 12” format for cost down reason. Fine line that is as small as 2μm has been evaluated on panels with the size as large as 508×508 mm in this study.
  • Keywords
    semiconductor device packaging; transistors; vias; Moore´s Law; electronics devices; fine line; fine trace substrate; integrated circuits; organic dielectrics; packaging density; packaging substrate; semiconductor industry; size 2 mum; size 508 mm; transistors; vias; Coatings; Copper; Films; Glass; Industries; Laminates; Substrates; 2µm fine line; 508mm×508mm panel size; CCL; laminate substrate; slit coater; sputter seed layer; undercut;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9040-9012-1
  • Type

    conf

  • DOI
    10.1109/ICEP-IAAC.2015.7111022
  • Filename
    7111022