Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding

Author

Okumura, Ken ; Higurashi, Eiji ; Suga, Tadatomo ; Hagiwara, Kei

Author_Institution

Univ. of Tokyo, Tokyo, Japan

fYear

2015

fDate

14-17 April 2015

Firstpage

448

Lastpage

451

Abstract

In this paper, we investigated the influence of air exposure time after gold (Au) deposition on bonding strength in Au-Au bonding. Synthetic quartz glass wafers with smooth Au thin film (thickness: 30 nm, root mean square surface roughness: 0.43 nm) were successfully bonded in air at room temperature after argon radio frequency plasma activation process, even when they were exposed to air for a long term (800-2000 h) after Au deposition. High die-shear strength was obtained and the fractures typically occurred inside the bulk glass during die-shear test rather than at the bonded interface.

Keywords

gold; quartz; surface treatment; wafer bonding; Au-Au; SiO₂; air exposure time; argon radio frequency plasma activation process; bonding strength; gold deposition; size 30 nm; surface activated wafer bonding; synthetic quartz glass wafers; temperature 293 K to 298 K; time 800 h to 2000 h; Bonding; Gold; Plasma temperature; Rough surfaces; Surface roughness; Surface treatment; Au-Au Bonding; Surface Activated Bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on

Conference_Location

Kyoto

Print_ISBN

978-4-9040-9012-1

Type

conf

DOI

10.1109/ICEP-IAAC.2015.7111055

Filename

7111055