Title :
Process parameters for formic acid treatment with Pt catalyst for Cu direct bonding
Author :
Matsuoka, Naoya ; Fujino, Masahisa ; Akaike, Masatake ; Suga, Tadatomo
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
Direct bonding of Cu in atmospheric pressure is required in various device interconnections. A technique using formic acid treatment with Pt catalyst has been proposed and applied to Cu bonding at a low temperature below 200°C.
Keywords :
bonding processes; catalysts; interconnections; platinum; semiconductor device metallisation; Cu; Pt; atmospheric pressure; catalyst; device interconnections; direct bonding; formic acid treatment; Bonding; Films; Oxidation; Platinum; Radiation effects; Surface treatment; Temperature; Cu-Cu direct bonding; bonding temperature; formic acid;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111058
