Title :
Influence of atmospheric-pressure plasma treatment on surface and electrical properties of photodiode chips
Author :
Ikeda, So ; Higurashi, Eiji ; Suga, Tadatomo
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
Atmospheric pressure (AP) plasma has been used for the surface activation of gold (Au) prior to low temperature Au-Au bonding. In this paper, flip-chip type Indium Gallium Arsenide (InGaAs) photodiode (PD) chips were treated by AP plasma jets. The plasma treatment was performed with two different mixed gases (Ar+O2 and Ar+H2). Degradation of PD chips under AP plasma irradiations was investigated through current-voltage (I-V) measurements performed under dark condition at room temperature. The results show that dark current of PD chips was increased after Ar+O2 AP plasma treatment and significantly improved after subsequent Ar+H2 AP plasma treatment.
Keywords :
III-V semiconductors; bonding processes; flip-chip devices; gallium arsenide; gold compounds; indium compounds; photodiodes; Au-Au; InGaAs; atmospheric-pressure plasma treatment; current-voltage measurements; electrical properties; flip-chip type photodiode; low temperature bonding; photodiode chips; plasma jets; surface activation; Bonding; Dark current; Gold; Plasma temperature; Radiation effects; Surface treatment; atmospheric-pressure plasma; dark current; photodiode; surface activated bonding;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111097
