Title :
Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements
Author :
Stellari, Franco ; Jenkins, Keith A. ; Weger, Alan J. ; Linder, Barry ; Song, Peilin
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Self-heating of FinFET devices is a reliability concern, especially for large devices with dense arrays on SOI. In this paper, we leverage the Picosecond time resolution of Time-Resolved Emission (TRE) measurements to quantitatively measure the modulation of the off-state leakage current due to self-heating in individual FinFETs fabricated in SOI technology. This provides the first direct measurement of the self-heating from individual FinFET devices.
Keywords :
MOSFET; silicon-on-insulator; 2D TRE measurement; 2D time resolved emission measurement; FinFET SOI devices; off-state leakage current; picosecond time resolution; self-heating characterization; Current measurement; FinFETs; Heating; Logic gates; Photonics; Temperature; Temperature measurement; FinFET; Picosecond Imaging for Circuit Analysis (PICA); SOI; Time Resolved Emission (TRE); self-heating;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112672
