Title :
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology
Author :
Besnard, G. ; Garros, X. ; Subirats, A. ; Andrieu, F. ; Federspiel, X. ; Rafik, M. ; Schwarzenbach, W. ; Reimbold, G. ; Faynot, O. ; Cristoloveanu, S.
Author_Institution :
Parc Technol. des Fontaines, Chemin des Franques, Soitec, Bernin, France
Abstract :
In this paper, we investigate the potential of strained Silicon-On-Insulator (sSOI) for the future advanced CMOS nodes. Strained FDSOI depicts a 30% higher performance in term of ION/IOFF thanks to higher mobility. Changes in band structure reduce the gate leakage and devices depict superior HC reliability at same drive current. The better interface quality with sSi layer leads to higher immunity to dangling bonds generation. Strain integration does not affect BTI and breakdown reliability.
Keywords :
CMOS integrated circuits; MOSFET; dangling bonds; integrated circuit reliability; silicon-on-insulator; advanced CMOS nodes; advanced planar FDSOI technology; dangling bonds generation; gate leakage; interface quality; reliability; strained SOI transistors; strained silicon-on-insulator; Degradation; Integrated circuit reliability; Performance evaluation; Silicon; Stress; Substrates; BTI; FDSOI; Hot Carrier; breakdown; reliability; sSOI; strained silicon;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112691
