DocumentCode
709818
Title
TDDB improvement of copper/dielectric in the highly-integrated BEOL structure for 28nm technology node and beyond
Author
Cheng-Pu Chiu ; Yen-Chun Liu ; Bin-Siang Tsai ; Yi-Jing Wang ; Yeh-Sheng Lin ; Yun-Ru Chen ; Chien-Lin Weng ; Sheng-Yuan Hsueh ; Hung, Jack ; Ho-Yu Lai ; Jei-Ming Chen ; Cheng, Albert H.-B ; Chien-Chung Huang
Author_Institution
Adv. Technol. Dev. Div., United Microelectron. Corp., Tainan, Taiwan
fYear
2015
fDate
19-23 April 2015
Abstract
Here we demonstrate the copper/dielectric TDDB improvement of 8 metal layers in 28nm technology node with 90 nm pitch. After the process optimization, the Weibull slope of MOM TDDB increase from 0.85 to 1.28 that improves the estimated MOM TDDB about 200 times.
Keywords
copper; dielectric materials; electromigration; MOM TDDB estimation; Weibull slope; copper-dielectric TDDB improvement; highly-integrated BEOL structure; metal layers; process optimization; size 28 nm; Copper; Dielectrics; Integrated circuit reliability; Method of moments; Process control; BEOL; TDDB; process optimization; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/IRPS.2015.7112701
Filename
7112701
Link To Document