Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology

Here we show that nFET and pFET time-dependent variability, in addition to the standard time-zero variability, can be fully characterized and projected using a series of measurements on a large test element group (TEG) fabricated in an advanced High-k/Metal Gate (HK/MG) technology, thus allowing us to fully characterize the underlying technology. BTI is shown to follow a bimodal defect-centric behavior, for NBTI related to Interface Layer (IL)(SiO₂) and HK trapping and for PBTI related to HK and IL/HK interface trapping. Moreover for the first time, an analytical description of the bimodal total ΔV_TH shift is derived, as a special case of the generalized defect-centric distribution, which we derive in this work to accurately describe the tail of the distribution.