Title :
Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI
Author :
Chaudhary, A. ; Kaczer, B. ; Roussel, P.J. ; Chiarella, T. ; Horiguchi, N. ; Mahapatra, S.
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai, India
Abstract :
Effect of mobility variation (Δμeff) during NBTI stress is well documented for larger area devices. In this paper, the effect of Δμeff on the statistics of NBTI degradation for small area devices is explored. Statistically relevant number of high-κ last Replacement Metal Gate p-FinFETs are characterized for NBTI stress to cover a range of three standard deviations for threshold voltage degradation (ΔVT). It is shown that Δμeff can results into erroneous mean (μ) and sigma (σ) VT shifts governing stochastic NBTI. The amount of error induced is found to depend on sense voltage (|VMEAS|). Further, correlation of ΔVT to VT0 is analyzed with VT0 estimated employing two different methods.
Keywords :
MOSFET; high-k dielectric thin films; negative bias temperature instability; RMG-HKMG FinFETs; extraction scheme; high-κ last replacement metal gate p-FinFETs; mobility variation effect; negative bias temperature instability; small area devices; stochastic NBTI stress; threshold voltage degradation; time dependent variability; Correlation; Degradation; Logic gates; Pollution measurement; Stress; Stress measurement; Voltage measurement; FinFETs; Negative Bias Temperature Instability (NBTI); Replacement Metal Gate (RMG); SPICE; mobility variation (Δμeff); p-MOSFETs;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112705
