Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI

Author

Chaudhary, A. ; Kaczer, B. ; Roussel, P.J. ; Chiarella, T. ; Horiguchi, N. ; Mahapatra, S.

Author_Institution

Dept. of Electr. Eng., IIT Bombay, Mumbai, India

fYear

2015

fDate

19-23 April 2015

Abstract

Effect of mobility variation (Δμ_eff) during NBTI stress is well documented for larger area devices. In this paper, the effect of Δμ_eff on the statistics of NBTI degradation for small area devices is explored. Statistically relevant number of high-κ last Replacement Metal Gate p-FinFETs are characterized for NBTI stress to cover a range of three standard deviations for threshold voltage degradation (ΔV_T). It is shown that Δμ_eff can results into erroneous mean (μ) and sigma (σ) V_T shifts governing stochastic NBTI. The amount of error induced is found to depend on sense voltage (|V_MEAS|). Further, correlation of ΔV_T to V_T0 is analyzed with V_T0 estimated employing two different methods.

Keywords

MOSFET; high-k dielectric thin films; negative bias temperature instability; RMG-HKMG FinFETs; extraction scheme; high-κ last replacement metal gate p-FinFETs; mobility variation effect; negative bias temperature instability; small area devices; stochastic NBTI stress; threshold voltage degradation; time dependent variability; Correlation; Degradation; Logic gates; Pollution measurement; Stress; Stress measurement; Voltage measurement; FinFETs; Negative Bias Temperature Instability (NBTI); Replacement Metal Gate (RMG); SPICE; mobility variation (Δμeff); p-MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112705

Filename

7112705