Origins and implications of increased channel hot carrier variability in nFinFETs

Author

Kaczer, B. ; Franco, J. ; Cho, M. ; Grasser, T. ; Roussel, Ph J. ; Tyaginov, S. ; Bina, M. ; Wimmer, Y. ; Procel, L.M. ; Trojman, L. ; Crupi, F. ; Pitner, G. ; Putcha, V. ; Weckx, P. ; Bury, E. ; Ji, Z. ; De Keersgieter, A. ; Chiarella, T. ; Horiguchi, N.

Author_Institution

imec, Leuven, Belgium

fYear

2015

fDate

19-23 April 2015

Abstract

Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-dependent variability component is extracted using a novel methodology based on matched pairs. It is concluded that in deeply-scaled devices, CHC-induced time-dependent distributions will be bimodal, pertaining to bulk charging and to interface defect generation, respectively. The latter, high-impact mode will control circuit failure fractions at high percentiles.

Keywords

MOSFET; hot carriers; BTI stress; CHC stress; bias temperature instability stress; deeply scaled nFinFET; failure fraction; increased channel hot carrier variability; intrinsic time-dependent variability component; Degradation; FinFETs; Logic gates; Sensitivity; Stress; Systematics; Threshold voltage; Bias Temperature Instability (BTI); Channel Hot Carriers (CHC); FinFETs; Time-Dependent Variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112706

Filename

7112706