DocumentCode :
709854
Title :
Negative bias temperature instability caused by plasma induced damage in 65 nm bulk and Silicon on thin BOX (SOTB) processes
Author :
Kishida, Ryo ; Oshima, Azusa ; Kobayashi, Kazutoshi
Author_Institution :
Dept. of Electron., Kyoto Inst. of Technol., Kyoto, Japan
fYear :
2015
fDate :
19-23 April 2015
Abstract :
Reliability degradation caused by plasma induced damage (PID) has become a significant concern with the miniaturization of electronic devices. In this paper, we investigate negative bias temperature instability (NBTI) caused by PID measuring frequencies of ring oscillators with an antenna on a single stage. We fabricated a chip in 65 nm bulk and Silicon On Thin BOX (SOTB) processes. Degradation rates of NBTI are equivalent among antenna structures in the antenna ratio (AR) of 5k and 500. NBTI is accelerated by PID in AR of 50k. NBTI degradation caused by PID is equivalent in the bulk and SOTB. SOTB also prevents PID by connecting an antenna to a drain as same as the bulk.
Keywords :
antennas; negative bias temperature instability; oscillators; NBTI degradation rates; PID; SOTB; antenna ratio; antenna structures; electronic device miniaturization; negative bias temperature instability; plasma induced damage; reliability degradation; ring oscillators; silicon on thin BOX processes; size 65 nm; Antenna measurements; Antennas; Degradation; Frequency measurement; Logic gates; Substrates; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/IRPS.2015.7112780
Filename :
7112780
Link To Document :
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