Negative bias temperature instability caused by plasma induced damage in 65 nm bulk and Silicon on thin BOX (SOTB) processes

Reliability degradation caused by plasma induced damage (PID) has become a significant concern with the miniaturization of electronic devices. In this paper, we investigate negative bias temperature instability (NBTI) caused by PID measuring frequencies of ring oscillators with an antenna on a single stage. We fabricated a chip in 65 nm bulk and Silicon On Thin BOX (SOTB) processes. Degradation rates of NBTI are equivalent among antenna structures in the antenna ratio (AR) of 5k and 500. NBTI is accelerated by PID in AR of 50k. NBTI degradation caused by PID is equivalent in the bulk and SOTB. SOTB also prevents PID by connecting an antenna to a drain as same as the bulk.