Title :
Enhanced CDM-robustness for the packaged IC with the extra bonding wire to the die-attach plate
Author :
Tzu-Cheng Kao ; Jian-Hsing Lee ; Chen-Hsin Lien ; Chih-Hsien Wang ; Kuang-Cheng Tai ; Hung-Der Su
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
From the experimental measurements, the dominant charge source for a packaged IC chip during a charged-device model (CDM) ESD event is the capacitor between the die-attach plate and the metal bus line, CSUB. By adding a bonding wire between the die-attach plate and the Vss pin, a parallel inductor to the CSUB can be created. The CDM-robustness for the packaged IC chip is significantly improved because of this parallel LC resonance circuit.
Keywords :
integrated circuit modelling; integrated circuit packaging; lead bonding; microassembling; CDM ESD event; IC packaging; capacitor; charge source; charged-device model; die-attach plate; enhanced CDM-robustness; extra bonding wire; metal bus line; parallel LC resonance circuit; Bonding; Capacitance; Discharges (electric); Integrated circuit modeling; RLC circuits; Wires; Charged device model (CDM); Electrostatic-discharge (ESD); Silicon on insulator (SOI);
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112797
