Title :
Interconnect design study for electromigration reliability improvement
Author :
Marti, G. ; Arnaud, L. ; Ney, D. ; Wouters, Y.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
In this paper two different structures that reproduce crucial aspects of interconnect design are studied extensively. The purpose is to evaluate the effect of these configurations on the electromigration degradation in order to provide lifetime quantitative design rules. Taking into account these configurations will increase the accuracy of reliability prediction at design level and help designers with high current density needs.
Keywords :
electromigration; interconnections; reliability; design level; electromigration degradation; electromigration reliability improvement; interconnect design study; lifetime quantitative design rules; reliability prediction accuracy; Cathodes; Degradation; Electromigration; Microstructure; Reliability; Resistance; Stress; copper; electromigration; reliability improvement;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112805
