DocumentCode
709878
Title
Interconnect design study for electromigration reliability improvement
Author
Marti, G. ; Arnaud, L. ; Ney, D. ; Wouters, Y.
Author_Institution
STMicroelectron., Crolles, France
fYear
2015
fDate
19-23 April 2015
Abstract
In this paper two different structures that reproduce crucial aspects of interconnect design are studied extensively. The purpose is to evaluate the effect of these configurations on the electromigration degradation in order to provide lifetime quantitative design rules. Taking into account these configurations will increase the accuracy of reliability prediction at design level and help designers with high current density needs.
Keywords
electromigration; interconnections; reliability; design level; electromigration degradation; electromigration reliability improvement; interconnect design study; lifetime quantitative design rules; reliability prediction accuracy; Cathodes; Degradation; Electromigration; Microstructure; Reliability; Resistance; Stress; copper; electromigration; reliability improvement;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/IRPS.2015.7112805
Filename
7112805
Link To Document