Title :
Investigation of the data retention mechanism and modeling for the high reliability embedded split-gate MONOS flash memory
Author :
Kawashima, Yoshiyuki ; Hashimoto, Takashi ; Yamakawa, Ichiro
Author_Institution :
MCU Device Technol. Dept., Renesas Electron. Corp., Hitachinaka, Japan
Abstract :
We investigated the data retention mechanism of metal-oxide nitride oxide silicon (MONOS) flash memory. We developed a data retention model that is based on the thermionic emissions and the simple estimation method with a long lifetime and a wide temperature range. The estimated retention results from using the new method were in good agreement with the measurement retention results from more than 6 years and within a temperature range from 150-450°C. The MONOS memory with split-gate (SG-MONOS) we created has a 20-yr lifetime at more than 200°C.
Keywords :
flash memories; integrated circuit modelling; integrated circuit reliability; thermionic emission; data retention mechanism; high reliability embedded split-gate MONOS flash memory; metal-oxide nitride oxide silicon flash memory; temperature 150 degC to 450 degC; thermionic emissions; Electron traps; Films; MONOS devices; Temperature distribution; Temperature measurement; Thermionic emission; Time measurement; Data Retention; Flash memory; Metal-Oxide Nitride Oxide Silicon (MONOS); Micro controller unit (MCU); Split-Gate MONOS (SG-MONOS);
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112809
