New insight in plasma charging impact on gate oxide breakdown in FDSOI technology

In this work we study the gate oxide breakdown induced by the plasma process in the FDSOI devices. Due to box isolation, this device is particular. Indeed, the charges collected by the gate and the source/drain antennas can induce damage. This is different with respect to classical bulk devices where the field across the oxide is determined by potential at the gate antenna. A new set of test structures to investigate these plasma induced damage (PID) configuration are designed, analyzed and solution to avoid this damage is proposed.