Title :
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams
Author :
GeunYong Bak ; Soonyoung Lee ; Hosung Lee ; KyungBae Park ; Sanghyeon Baeg ; ShiJie Wen ; Wong, Richard ; Slayman, Charlie
Author_Institution :
Dept. of Electron. & Commun. Eng., Hanyang Univ., Ansan, South Korea
Abstract :
Logic upsets in 3x nm DDR3 SDRAM have been observed with both 45 MeV proton and neutron irradiation. The logic upsets caused massive bit flips, which manifested as either column or row clusters. If all the bits flipped by a logic upset are counted as multiple pseudo SBU events, then the cross-section value of the pseudo SBU events was, at least, four orders of magnitude higher than that of the SBU events.
Keywords :
DRAM chips; SRAM chips; neutron effects; proton effects; radiation hardening (electronics); DDR3 SDRAMs; electron volt energy 45 MeV; frequency 800 MHz; logic soft error study; logic upsets; multiple pseudo SBU events; neutron beams; neutron irradiation; proton beams; proton irradiation; Neutrons; Particle beams; Protons; SDRAM; Single event upsets; Testing; DDR3 SDRAM; logic upset cluster; single event upset;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112832
