• DocumentCode
    710367
  • Title

    An in-pixel equalizer with kTC noise cancellation and FPN reduction for time-of-flight CMOS image sensor

  • Author

    Zheng-Wei Huang ; Chin-Fong Chiu ; Chih-Cheng Hsieh

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Conventional TOF depth image sensors have suffered from the reset kBTC noise of required accumulation readout of multiple-phase signal without feasible correlated double sampling (CDS) operation. This paper presents a new TOF pixel circuit with kBTC reset noise cancellation by proposed equalized reset (ER) operation. Accompanied with the differential operation of phase modulation readout for depth calculation, ER pixel effective cancel out the reset noise and reduce fixed pattern noise as well. For background suppression, sub-integrating (SI) operation is also proposed to extend the dynamic range for various applications. A prototype chip with 64×128 pixel array and 3.3V operation has been designed and fabricated in 0.13μm CMOS image sensor (CIS) technology. The pixel pitch is 10×10 um2 with a fill factor of 24.9%; and the chip size is 2.5mm×2.2mm. The measurement result shows 67% reduction of pixel fixed-pattern-noise (FPN), 300uV cancellation of kTC noise, and 23.1dB SNR improvement compared to the counterpart without ER and SI operation.
  • Keywords
    CMOS image sensors; correlation methods; integrated circuit noise; noise abatement; phase modulation; readout electronics; sampling methods; CDS; CIS; ER operation; FPN reduction; SI operation; TOF depth image sensor; TOF pixel circuit; background suppression; correlated double sampling; in-pixel equalizer reset operation; kBTC reset noise cancellation; multiple-phase signal readout; noise figure 23.1 dB; phase modulation readout; pixel fixed-pattern-noise; reduce fixed pattern noise; size 0.13 mum; subintegrating operation; time-of-flight CMOS image sensor; voltage 3.3 V; voltage 300 muV; Dynamic range; Erbium; Image sensors; Noise cancellation; Signal to noise ratio; Silicon; 3-D pixel; CMOS image sensor; Time-of-flight(TOF); depth image;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test (VLSI-DAT), 2015 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-DAT.2015.7114520
  • Filename
    7114520