• DocumentCode
    710374
  • Title

    Integrating aging aware timing analysis into a commercial STA tool

  • Author

    Karapetyan, Shushanik ; Schlichtmann, Ulf

  • Author_Institution
    Inst. for Electron. Design Autom., Tech. Univ. Munchen, Munich, Germany
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    With the continuous scaling of transistor sizes, aging effects become more and more pronounced. Two dominant effects are negative bias temperature instability (NBTI) and hot carrier injection (HCI). Both of these mechanisms negatively impact the timing behavior of circuits. Traditionally, aging analysis has not been a part of the established circuit design flow. However, as the impact of aging effects increases, the necessity of their consideration in the design flow grows. Various device and gate level models have been developed to explore and study these effects. However, commercial tools do not yet support aging analysis on gate level, therefore aging analysis is not commonly available to industrial designers yet. This paper presents an automated methodology for fast and accurate NBTI and HCI aware timing analysis. The approach utilizes the AgeGate aging aware gate model and integrates it into a commercial static timing analysis (STA) tool (Synopsys PrimeTime). The paper presents results obtained from applying the method to various benchmark circuits. These results demonstrate that aging is relevant and that it can efficiently be analyzed using commercial tools.
  • Keywords
    ageing; circuit analysis computing; digital circuits; hot carriers; logic gates; negative bias temperature instability; timing; AgeGate aging aware logic gate model; HCI-aware timing analysis; NBTI-aware timing analysis; Synopsys PrimeTime; aging aware timing analysis; benchmark circuits; circuit design flow; circuit timing behavior; commercial STA tool; commercial static timing analysis tool; device level model; gate level model; hot carrier injection; negative bias temperature instability; transistor size scaling; Aging; Degradation; Delays; Human computer interaction; Logic gates; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test (VLSI-DAT), 2015 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-DAT.2015.7114528
  • Filename
    7114528