Title :
Effect of Ta Insertion in Reference Layers of MTJs With Perpendicular Anisotropy
Author :
Le Goff, Adrien ; Garcia, Kledermon ; Vernier, Nicolas ; Tahmasebi, Taiebeh ; Cornelissen, Sven ; Min, Tai ; Devolder, Thibaut
Author_Institution :
Inst. d´Electron. Fondamentale, France/Univ. Paris-Sud, Orsay, France
Abstract :
We analyze the opportunity of inserting a Ta layer between the polarizing section and the high anisotropy section in the reference subsystem of CoFeB-based tunnel junctions with perpendicular magnetic anisotropy. Using vector network analyzer ferromagnetic resonance, polar Kerr magnetometry, and magnetization dynamics modeling, we deduce the strength of the ferromagnetic interlayer exchange coupling energy J through various thickness of tantalum that impacts on the overall performance of the tunnel junctions. J culminates at 0.44 mJ/m2 through 3 Å of Ta, but the Co/Pt properties are then suboptimal. Our methodology can be used to rationally find the performance optimum in the reference layers of perpendicularly magnetized tunnel junctions.
Keywords :
Kerr magneto-optical effect; boron alloys; cobalt; cobalt alloys; exchange interactions (electron); ferromagnetic materials; ferromagnetic resonance; iron alloys; magnetic tunnelling; magnetisation; perpendicular magnetic anisotropy; platinum; tantalum; CoFeB-Ta-Co-Pt; ferromagnetic interlayer exchange coupling energy; ferromagnetic resonance; magnetic tunnel junction; magnetization dynamics modeling; perpendicular magnetic anisotropy; polar Kerr magnetometry; reference layers; tantalum insertion; vector network analyzer; Anisotropic magnetoresistance; Coercive force; Couplings; Magnetic multilayers; Magnetic resonance; Magnetic tunneling; Magnetization; Ferromagnetic resonance; PMOKE; VNAFMR; magnetic random access memories; magnetic tunnel junction; modelling; perpendicular magnetic anisotropy; tantalum; thin layer;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2014.2328664