Title :
All-Semiconductor Photonic Crystal Surface-Emitting Lasers Based on Epitaxial Regrowth
Author :
Taylor, R.J.E. ; Williams, D.M. ; Childs, D.T.D. ; Stevens, B.J. ; Shepherd, L.R. ; Khamas, S. ; Groom, K.M. ; Hogg, R.A. ; Ikeda, N. ; Sugimoto, Yoshiki
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
The realization of all-semiconductor epitaxially regrown photonic crystal (PC) surface-emitting lasers is reported. PC coupling strengths, band structure, optimization of epitaxial regrowth, and operating characteristics are discussed. Room temperature operation allows agreement between theoretical and experimental band structure to be confirmed.
Keywords :
epitaxial growth; optical couplers; optimisation; photonic crystals; semiconductor lasers; PC coupling strengths; all-semiconductor epitaxial lasers; all-semiconductor photonic crystal lasers; band structure; epitaxial regrowth; optimization; regrown photonic crystal lasers; surface-emitting lasers; Couplings; Dielectrics; Epitaxial growth; Gallium arsenide; Lasers; Photonic crystals; Shape; Nanophotonics; photonic crystals; semiconductor growth; semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2249293
