DocumentCode :
710459
Title :
32 GHz germanium bipolar phototransistors on silicon photonics
Author :
Going, Ryan ; Keraly, Christopher ; Tae Joon Seok ; Yablonovich, Eli ; Wu, Ming C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
fYear :
2015
fDate :
20-22 April 2015
Firstpage :
38
Lastpage :
39
Abstract :
We present designs and simulations for a 32 GHz fT 3-terminal germanium bipolar phototransitor for high-sensitivity 10 GB/s receiving. We also experimentally demonstrate a preliminary, non-optimized phototransistor with 14 GHz fT built on silicon photonics.
Keywords :
elemental semiconductors; germanium; integrated optoelectronics; microwave bipolar transistors; millimetre wave bipolar transistors; phototransistors; silicon; 3-terminal germanium bipolar phototransitor; Ge-Si; frequency 32 GHz to 14 GHz; high-sensitivity; nonoptimized phototransistor; silicon photonics; Gain; Germanium; Optical sensors; Optical waveguides; Phototransistors; Silicon photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Interconnects Conference (OI), 2015 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4799-8178-6
Type :
conf
DOI :
10.1109/OIC.2015.7115675
Filename :
7115675
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=710459
بازگشت