Yield prognosis for fab-to-fab product migration

Author

Ahmadi, Ali ; Ke Huang ; Nahar, Amit ; Orr, Bob ; Pas, Michael ; Carulli, John M. ; Makris, Yiorgos

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

6

Abstract

We investigate the utility of correlations between e-test and probe test measurements in predicting yield. Specifically, we first examine whether statistical methods can accurately predict parametric probe test yield as a function of e-test measurements within the same fab. Then, we investigate whether the e-test profile of a destination fab, in conjunction with the e-test and probe test profiles of a source fab, suffice for accurate yield prognosis during fab-to-fab product migration. Results using an industrial dataset of ~3.5M devices from a 65nm Texas Instruments RF transceiver design fabricated in two different fabs reveal that (i) within-fab yield prediction error is in the range of a few tenths of a percentile point, and (ii) fab-to-fab yield prediction error is in the range of half a percentile point.

Keywords

integrated circuit measurement; integrated circuit testing; integrated circuit yield; statistical analysis; transceivers; RF transceiver design; Texas instruments; e-test measurement; fab-to-fab product migration; parametric probe test yield; probe test measurement; size 65 nm; statistical method; within-fab yield prediction error; yield prognosis; Accuracy; Calibration; Monte Carlo methods; Predictive models; Probes; Prognostics and health management; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Test Symposium (VTS), 2015 IEEE 33rd

Conference_Location

Napa, CA

Type

conf

DOI

10.1109/VTS.2015.7116261

Filename

7116261