DocumentCode
711017
Title
Back-hopping phenomenon in perpendicular mangetic tunnel junctions
Author
Sheng-Huang Huang ; Kuei-Hung Shen ; Cheng-Wei Chien ; Shan-Yi Yang ; Jia-Hong Shyu ; Ding-Yeong Wang ; Keng-Ming Kuo ; Tzu-Kun Ku ; Deng, D.
Author_Institution
Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear
2015
fDate
27-29 April 2015
Firstpage
1
Lastpage
2
Abstract
This study shows a clear correlation between back hopping, write error rate, bias-dependent coercivity (Hc) and the switching phase diagram (SPD) of p-MTJs. Data support that the bias-induced fieldlike torque, in addition to the Slonczewski anti-damping torque, at higher bias voltages in dual-MgO p-MTJ, and a thinner MgO capping layer may suppress the occurrence of back hopping.
Keywords
coercive force; error statistics; magnesium compounds; magnetic tunnelling; phase diagrams; MgO; MgO capping layer; SPD; Slonczewski anti-damping torque; back hopping; bias-dependent coercivity; bias-induced fieldlike torque; dual-MgO p-MTJ; perpendicular magnetic tunnel junctions; switching phase diagram; write error rate; Magnetic field measurement; Magnetic tunneling; Switches; Thermal stability; Torque; Voltage measurement; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/VLSI-TSA.2015.7117565
Filename
7117565
Link To Document