Experimental study of variability in polycrystalline and crystalline silicon channel FinFET CMOS inverters

Author

Liu, Y.X. ; Hori, Y. ; Ohno, M. ; Matsukawa, T. ; Endo, K. ; O´uchi, S. ; Tsukada, J. ; Yamauchi, H. ; Ishikawa, Y. ; Mizubayashi, W. ; Morita, Y. ; Migita, S. ; Ota, H. ; Masahara, M.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

Polycrystalline-silicon (poly-Si) and crystalline-silicon (crystal-Si) channel FinFET CMOS inverters were successfully fabricated and the variations of threshold voltage (V_t) for their individual n- and p-channel transistors and the logic gate V_t (V_Thc) for the inverters were systematically investigated. It was found that poly-Si n- and p-channel devices show about 3 and 5 times larger σV_t values, respectively and about 2 times larger σV_Thc as compared to those in crystal-Si channel ones. The calculated σV_THC values by using the error propagation low are good agreement with experimental results.

Keywords

CMOS logic circuits; MOSFET; elemental semiconductors; logic gates; silicon; Si; crystal-Si channel FinFET CMOS inverters; error propagation; logic gate; n-channel transistors; p-channel transistors; poly-Si n-channel devices; poly-Si p-channel devices; polycrystalline-silicon channel FinFET CMOS inverters; threshold voltage; CMOS integrated circuits; FinFETs; Inverters; Logic gates; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2015.7117571

Filename

7117571