• DocumentCode
    711027
  • Title

    Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias

  • Author

    Besnard, G. ; Garros, X. ; Subirats, A. ; Andrieu, F. ; Federspiel, X. ; Rafik, M. ; Schwarzenbach, W. ; Reimbold, G. ; Faynot, O. ; Cristoloveanu, S. ; Mazure, C.

  • Author_Institution
    CEA-LETI, Grenoble, France
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we investigate the potential of strained Silicon-On-Insulator for the future advanced CMOS nodes. Strained FDSOI devices not only exhibit a 30% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current regardless of the back bias.
  • Keywords
    CMOS integrated circuits; hot carriers; semiconductor device reliability; silicon-on-insulator; CMOS nodes; back bias; hot carrier reliability; silicon-on-insulator; strained SOI transistors; Degradation; Performance evaluation; Reliability; Silicon; Silicon-on-insulator; Stress; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2015.7117577
  • Filename
    7117577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=711027