Thermal ion implantation for advanced semiconductor processing

Summary form only given. Ion Implantation has been the mainstay for doping of transistors and is used for precise doping for controlling device characteristics including drive current, reducing device leakage, and transistor isolation. Implant has also been used extensively for delivering cost effective multiple threshold voltages required for system on a chip. As devices scaled to 28nm and beyond, cryogenic implants are used extensively to deliver complete amorphization and thus improve dopant activation, interface quality, and leakage reduction. With the advent of Finfets and other 3D transistors, heated implants are integrated to maintain silicon crystallinity and increase activation. In this paper, we will explore the role of thermal implants in enabling transistor scaling.