Title :
SiGe BiCMOS and eWLB packaging technologies for automotive radar solutions
Author :
Bock, J. ; Lachner, R.
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
In this paper the evolution of silicon based automotive radar for the 76-81 GHz range is described. Starting with SiGe bare-die chips in 2009, today packaged MMICs are available for low-cost radar applications. Future SiGe BiCMOS technology will enable highly integrated single chip radars with superior performance at lower power consumption. This will pave the way for automotive radar safety for everyone and will be an important step towards autonomous driving.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; automotive electronics; ball grid arrays; bipolar MIMIC; field effect MIMIC; road vehicle radar; wafer level packaging; BiCMOS packaging technology; SiGe; automotive radar solutions; eWLB packaging technology; embedded wafer level ball array; frequency 76 GHz to 81 GHz; packaged MMIC; Automotive engineering; BiCMOS integrated circuits; MMICs; Radar; Radio frequency; Silicon; Silicon germanium; SiGe BiCMOS; automotive radar; eWLB package;
Conference_Titel :
Microwaves for Intelligent Mobility (ICMIM), 2015 IEEE MTT-S International Conference on
Conference_Location :
Heidelberg
DOI :
10.1109/ICMIM.2015.7117932
