DocumentCode :
711206
Title :
Effect of power cycling parameters on predicted IGBT lifetime
Author :
Sarkany, Zoltan ; Vass-Varnai, Andras ; Rencz, Marta
Author_Institution :
Mentor Graphics, Budapest, Hungary
fYear :
2015
fDate :
7-14 March 2015
Firstpage :
1
Lastpage :
9
Abstract :
In power electronics there is an increasing need for accurate lifetime prediction. The results of power cycling tests are widely used as input data for the lifetime calculation. The general method of power cycling is described in the JESD22-A122 JEDEC standard, however as the industry has made significant progress in power module design and reliability testing ever since the standard was published. Based on the latest considerations and published data, in this paper we try to collect and discuss some important factors, namely the electrical setup, cycle time and power cycling strategy, which can significantly affect the final test results, and allow the reliability engineers to make more focused testing definitions.
Keywords :
insulated gate bipolar transistors; power electronics; semiconductor device reliability; IGBT lifetime prediction; JESD22- A122 JEDEC standard; cycle time; electrical setup; insulated gate bipolar transistors; lifetime calculation; power cycling test parameter effect; power electronics; power module design; reliability testing; Heating; Insulated gate bipolar transistors; Junctions; Temperature measurement; Temperature sensors; Voltage measurement; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Aerospace Conference, 2015 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
978-1-4799-5379-0
Type :
conf
DOI :
10.1109/AERO.2015.7118982
Filename :
7118982
Link To Document :
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