DocumentCode
711552
Title
Indium doped titanium dioxide: A high mobility and low K- nanostructured semiconductor
Author
Senthilkumar, K. ; Sarkar, Subir Kumar ; Reddy, P. S. Sreenivasa
Author_Institution
Dept. of Electron. & Commun. Eng., Dr. M.G.R. Educ. & Res. Inst., Chennai, India
fYear
2013
fDate
12-14 Dec. 2013
Firstpage
471
Lastpage
475
Abstract
Compositional analysis done on the synthesized undoped and indium doped titanium dioxide nanoparticles by XRD, EDAX, UV-vis spectroscopy, SEM, parallel plate method. The UV spectograph reveals that the energy band gap is reduced and the wavelength spectrum is shifted towards red from blue region with respect to TiO2.The electrical properties indicate that the conductivity is around 10-5 mho/cm and mobility is significantly higher than that of un doped TiO2 and K Value is low. The SEM result reveals that the particles are spherical in nature and coagulated. The decreased energy band gap makes it suitable for semiconducting purpose and is found suitable for application in optoelectronics devices like solar cell, phototransistors etc.
Keywords
X-ray chemical analysis; X-ray diffraction; electrical conductivity; electron mobility; energy gap; indium; nanofabrication; nanoparticles; red shift; scanning electron microscopy; semiconductor growth; semiconductor materials; titanium compounds; ultraviolet spectra; visible spectra; EDAX; SEM; TiO2:In; UV-vis spectroscopy; XRD; compositional analysis; electrical conductivity; electron mobility; energy band gap; indium-doped titanium dioxide; nanoparticles; nanostructured semiconductor; optoelectronic devices; parallel plate method; phototransistors; red shift; solar cell; spherical particles; wavelength spectrum; AnatasePhase; SOL-GEL Method; d-spacing; low-k;
fLanguage
English
Publisher
iet
Conference_Titel
Sustainable Energy and Intelligent Systems (SEISCON 2013), IET Chennai Fourth International Conference on
Conference_Location
Chennai
Print_ISBN
978-1-78561-030-1
Type
conf
DOI
10.1049/ic.2013.0355
Filename
7119742
Link To Document