Title :
A linear, highly-efficient, class-J handset power amplifier utilizing GaAs HBT technology
Author :
Refai, Wael Y. ; Davis, William A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper reports design techniques for a linear handset PA with high efficiency, representing a novel solution for the converged PA module architecture, allowing it to achieve a better performance than the hybrid architecture while reducing the cost and size. The techniques enable a single PA to operate in multiple modes (2G/GSM, 2.5G/EDGE, 3G/W-CDMA and 4G/LTE) with no reconfiguration, combining the operation of at least two PAs from the hybrid architecture (one for 2G/2.5G and another for 3G/4G). The solution applies class-J, to achieve higher efficiency and maintain linearity at the linear modes (2.5G/EDGE, 3G/W-CDMA and 4G/LTE), integrated with the utilization of GaAs HBT technology to allow more linearity enhancements. This work introduces the first application of class-J using GaAs HBT in a handset PA.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium arsenide; heterojunction bipolar transistors; telephone sets; 2.5G-EDGE; 2G-GSM; 3G-W-CDMA; 4G-LTE; GaAs; GaAs HBT technology; class-J handset power amplifier; converged PA module architecture; linear handset PA; linear modes; Broadband communication; Frequency measurement; Heterojunction bipolar transistors; Multiaccess communication; Spread spectrum communication; Telephone sets; GaAs HBT; PAE; broadband; class-J; converged PA module; efficiency; linearity; power amplifier; wireless handset;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual
Conference_Location :
Cocoa Beach, FL
DOI :
10.1109/WAMICON.2015.7120353
