• DocumentCode
    711691
  • Title

    High performance two-stage bootstrapped GaAs comparator with gain enhancement

  • Author

    Di Lan ; Yilu Ning ; Jing Wang ; Hao Jiang

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
  • fYear
    2015
  • fDate
    13-15 April 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A high performance GaAs pHEMT comparator using a double cascode self-bootstrapping configuration with gain enhancement is proposed and investigated in this paper. An improved active load using D-mode HEMT devices is discussed so that the differential-mode input can be further reduced. Fully differential input pair can be realized by either E or D mode FETs. The comparator operates with a single power supply and generates a single output with a buffer stage for driving a large load or subsequent stages. With newly designed comparator, not only small propagation delay of 339 psec, but also high output voltage swing 1.5 V have been demonstrated. Analysis of the adapted comparator circuit and optimization of all transistor sizes for its best performance is also presented in detail. The overall performance is on par with prior attempts.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; bootstrap circuits; buffer circuits; comparators (circuits); gallium arsenide; optimisation; D-mode HEMT devices; GaAs; GaAs pHEMT comparator; active load; buffer stage; comparator circuit; differential-mode input; double cascode self-bootstrapping configuration; gain enhancement; time 339 ps; two-stage bootstrapped GaAs comparator; voltage 1.5 V; Integrated circuits; Layout; MESFETs; PHEMTs; Propagation delay; E/D HEMT; GaAs comparator; gain enhancement; self-bootstrapping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual
  • Conference_Location
    Cocoa Beach, FL
  • Type

    conf

  • DOI
    10.1109/WAMICON.2015.7120379
  • Filename
    7120379