Title :
A 2.5-GHz band, 0.75-V high efficiency CMOS power amplifier IC with third harmonic termination technique in 0.18-µm CMOS
Author :
Kurniawan, Taufiq Alif ; Xin Yang ; Xiao Xu ; Itoh, Nobuyuki ; Yoshimasu, Toshihiko
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
Abstract :
In this paper, a 2.5-GHz band fully integrated high efficiency CMOS power amplifier IC with third harmonic termination technique for low supply voltage was designed, fabricated and fully evaluated in 0.18-μm CMOS technology. Since the proposed third harmonic termination technique effectively increases the PAE by reducing the rms drain current, the total dc power consumption is diminished. To control a threshold voltage for low supply voltage application, a 0.5-V back-gate voltage is applied for the transistor. The power amplifier IC exhibits an output power of 8.5 dBm and a peak PAE of 31.1 % at a supply voltage of only 0.75-V.
Keywords :
CMOS integrated circuits; MMIC power amplifiers; UHF power amplifiers; low-power electronics; frequency 2.5 GHz; high efficiency CMOS power amplifier; low supply voltage application; size 0.18 mum; third harmonic termination technique; voltage 0.75 V; Buildings; CMOS integrated circuits; CMOS technology; Frequency measurement; Switches; Voltage control; back-gate voltage; high efficiency; low supply voltage; third harmonic termination;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual
Conference_Location :
Cocoa Beach, FL
DOI :
10.1109/WAMICON.2015.7120389
